Method for manufacturing semiconductor device

ABSTRACT

A manufacturing method for a semiconductor device which is capable of manufacturing the semiconductor device with a high quality in high yields while reducing variations in electric characteristic is disclosed. The manufacturing method according to the present invention includes a main body wafer manufacturing process for manufacturing a wafer on which a semiconductor device to be completed as a product is formed and a monitor wafer manufacturing process for manufacturing a wafer on which a monitor element is formed, the processes sharing a monitoring step alone, the main body wafer manufacturing process including a variation reduction step, the monitor wafer manufacturing process including a quality check step and a condition setting step.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a manufacturing method for asemiconductor device. In particular, the invention relates to amanufacturing method for a semiconductor device including a method ofmonitoring halfway through a manufacturing process of the semiconductordevice and a method of reflecting monitoring information to itssubsequent manufacturing process.

2. Description of the Related Art

Upon manufacturing any products, product-to-product variation(production variation) impairs uniformity in product characteristics(inclusive of function, performance, and shape). To prevent it, amanufacturer faces an agonizing choice between relaxing a productionspecification to keep a production yield at a certain level (decrease inquality) and complying with a product specification to thereby causereduction in production yield (increase in cost). Under suchcircumstances, regarding a manufacturing method for a semiconductordevice as a typical method for mass-production of goods as well, someimprovement have been made and tried on a manufacturing method bycombining a cost-oriented manufacturing method with a quality-orientedmanufacturing method. Prior to explanation about the improvedmanufacturing method, generally-employed manufacturing methods for asemiconductor device are first described.

A semiconductor device is provided in a form of a semiconductor chip(for example, 0.5 mm in thickness, 10 mm in length, 8 mm in width) onwhich a number of electronic elements such as transistors, resistors,capacitors, diodes and wirings for electrically connecting theelectronic elements together are formed, and the chip is housed in apackage according to the environment it is actually used. The packagedchip is incorporated into an electronic device such as a computer, amobile telephone, a game console, etc., for variety of use. Amanufacturing process for semiconductor device consists of, as shown ina macro-manufacturing process flow of FIG. 2, a pre-manufacturingprocess X for lot-production of several dozens of wafers on which anumber of semiconductor chips are assigned and a post-manufacturingprocess Y for separating the semiconductor chips assigned on the wafersfrom one another to be housed in packages and subjected to producttesting. The post-manufacturing process Y hence includes packageassembly and product testing. Electric characteristics of asemiconductor device are nearly determined at the time of placing thesemiconductor chip on a wafer, in other words, upon the completion ofthe pre-manufacturing process X although there are a few exceptions,i.e., FPLD (digital IC), fuse memory, and such other semiconductordevices whose functions are determined by a user after the completion ofthe post-manufacturing process Y. It is assumed throughout the followingdescription that characteristic variation due to the post-manufacturingprocess Y is negligible. In this specification, description of themanufacturing process for the semiconductor device is thereforeexclusively focused on the pre-manufacturing process X. Description ofthe post-manufacturing process Y will accordingly be omitted hereafter.

Here, the pre-manufacturing process X for the semiconductor device willbe described with reference to a typical and simplified manufacturingprocess flow of FIG. 3 in which basic processes are shown. Asemiconductor device manufactured by utilizing these processes is alsocalled a CMOS semiconductor device.

1. Field Oxide Film Formation

Insulating films partially different in thickness are selectively formednear the surfaces of a semiconductor substrate, in this example a P-typesemiconductor substrate, through thermal oxidation etc. (FIG. 3, StepJ).

2. N Well Formation

Phosphorous ions for N well formation are selectively implanted into thesemiconductor substrate surface, for example, to thereby form an N well(FIG. 3, Step K).

3. Isolation with LOCOS

BF₂ ions for P-type channel stopper formation are selectively implantedinto the P-type semiconductor substrate surface and its vicinities, forexample, after which an element isolation insulating film and channelstopper are selectively formed by using a LOCOS method etc. (FIG. 3,Step L).

4. Channel Doping

Phosphorous ions for controlling a threshold voltage are selectivelyimplanted into the semiconductor substrate surface in an active regionfor element formation where a transistor is formed later to thereby forman impurity doped region (FIG. 3, Step M).

5. Gate Oxide Film Formation

An oxide film near the semiconductor substrate surface in the activeregion for element formation is removed to form a gate oxide filmthrough thermal oxidation etc. (FIG. 3, Step N).

6. Polysilicon Gate Formation

A poly-crystalline silicon (polysilicon) gate is selectively formed onthe gate oxide film through chemical vapor deposition (CVD),photolithography, and etching (FIG. 3, Step O).

7. Source/Drain Formation

After an oxide film is formed on the P-type semiconductor substratesurface by CVD or thermal oxidation, impurity-ions for formingsource/drain (SD) regions are implanted to the polysilicon gate and theoxide film in desired regions of the active region for the elementformation in a self-alignment manner to thereby form an N-type sourceregion, an N-type drain region, a P-type source region, and a P-typedrain region (FIG. 3, Step P).

8. Interlayer Insulating Film Formation

An oxide film is deposited on the P-type semiconductor substrate surfaceby CVD or the like to thereby form an interlayer insulating film (FIG.3, Step Q).

9. Contact Hole Formation

A contact hole is selectively formed onto an interlayer insulating filmthrough photolithography and etching (FIG. 3, Step R).

10. Metal Wiring Formation

A metal wiring is selectively formed on the interlayer insulating filmthrough sputtering, photolithography, etching, etc. (FIG. 3, Step S).

11. Protective Film

A protective film is deposited on the metal wiring and an opening isselectively formed in a desired region (metal wiring in an externalconnection terminal region etc.) (FIG. 3, Step T).

12. Wafer Inspection

A semiconductor chip and an IC tester are electrically connected througha wafer prober to test electric characteristics etc. of thesemiconductor device (FIG. 3, Step U).

As mentioned above, the semiconductor device is manufactured through along-term manufacturing process. Looking closer, the manufacturingprocess is very complicated and consists of well over 100 steps.

The electric characteristics of the semiconductor device are determineddepending on characteristics of circuit elements in the semiconductorchip. As well known in the art, the electric characteristic of a MOStransistor, which is a typical circuit element of the semiconductordevice, is approximately represented by the following equation (1) forunsaturated state:Id=μC(W/L)(Vg−Vt)Vd  (1)where

Id: drain current of a transistor

μ: carrier mobility of the transistor

C: gate capacitance per unit area of the transistor

W: gate width of the transistor

L: gate length of the transistor

Vg: gate-source voltage of the transistor

Vd: drain-source voltage of the transistor

Vt: threshold voltage of the transistor

As apparent from the equation (1), the current characteristics of thetransistor are determined by many characteristic parameters. Further,the threshold voltage Vt is derived from the following equation (2):Vt=V _(F)+2._(F)+(Q _(A) +Q _(B))/C  (2)where

V_(F): flat band voltage

_(F): shift in Fermi level due to impurity

Q_(A): interface charge per unit area at an interface between the oxidefilm and the silicon surface

Q_(B): charge per unit area of a depletion layer

C: gate capacitance per unit area of the transistor

The electric characteristics of the transistor manufactured through themanufacturing process including well over 100 steps may vary due to aninfluence of the long-term manufacturing process. In commercializing asemiconductor device, a product specification is determined by balancingthe quality with the cost while taking the variations into account, anda circuit is designed such that the electric characteristics of thesemiconductor device comply with the product specification. In somecases, however, high quality, e.g., high precision, should precede thecost as a result of reflecting the strong demand from the market. Thecharacteristic parameter sensitive to the variations in electriccharacteristics, such as the threshold voltage Vt may largely varybetween wafers, among the same lot, and in the same semiconductor chipas well as between lots. Heretofore, there is an increasing demand forrealization of a manufacturing method which absorbs and lowers thevariations of parameters having a large contribution to the variation inelectric characteristics of the semiconductor device, such as thethreshold voltage Vt.

Up to now, a manufacturing method for a semiconductor device has beenproposed, with which the aforementioned problem is solved and thevariations in the threshold voltage Vt are reduced. The manufacturingmethod is completed by adding, for example, a step of reducingvariations of FIG. 14, to the typical manufacturing process flow of FIG.2. The step of reducing the variations includes a quality check step Fof measuring and checking a quality of a half-completed product in themiddle of the manufacturing process, a condition setting step G ofsetting a manufacturing condition in a variation reduction step Hincluded in the subsequent manufacturing process for the semiconductordevice, based on the measurement information, and the variationreduction step H of absorbing and reducing the variations in electriccharacteristics under the set manufacturing condition for manufacturingthe semiconductor device. The above three steps are regarded as beingextended from the wafer inspection step (FIG. 3, Step U).

A first prior art aiming to solve the aforementioned problem provides afeed-back type manufacturing method including: measuring (or simulating)the threshold voltage Vt of an electronic element in a half-completedsemiconductor chip during manufacture under existing manufacturingconditions; adjusting and determining the next manufacturing conditionsfor manufacturing the next lot based on the existing manufacturingconditions for the semiconductor device and the measurements; reducingvariations in the threshold voltage Vt of the semiconductor device; andreducing variations in electric characteristics (see JP 2002-083958 A(p. 8, FIG. 1) for example). A second prior art aiming to solve theaforementioned problem provides a trimming type manufacturing methodincluding: adjusting values (e.g., resistance value) of passive elementsin a half-completed semiconductor chip; absorbing variations in thethreshold voltage Vt etc. for each chip; and reducing variations inelectric characteristics of a semiconductor device (see JP 07-086521 A(p. 5, FIG. 1), for example). These prior arts will be described inbrief below, but detailed description will be referred to eachpublication.

The feed-back type manufacturing method as the conventionalmanufacturing method for the semiconductor device aimed to reduceproduction variations is a method of setting the next manufacturingcondition based on the existing manufacturing condition of themanufacturing process in the case of manufacturing another semiconductordevice. More specifically, it is a manufacturing method including:measuring the threshold voltage Vt of a semiconductor productmanufactured under the existing manufacturing condition; measuring orevaluating a quality of the semiconductor device in course ofmanufacture (FIG. 15, Step F) and then revising and determining the nextmanufacturing condition based on the existing criteria (FIG. 15, StepG); and manufacturing the next semiconductor device under the nextmanufacturing condition (FIG. 15, Step H) to reduce the variations inelectric characteristics of the semiconductor device. According to thisfeed-back type manufacturing method, the next manufacturing condition isadjusted based on information on current variations to thereby reducethe variations in electric characteristics of the semiconductor device.A specific method of determining the next manufacturing condition isshown in FIG. 15.

The trimming type manufacturing method as another typical manufacturingmethod for a semiconductor device aimed to reduce the productionvariation uses a trimming circuit as shown in FIG. 18. In the trimmingcircuit of FIG. 18, resistors 220 and 221 are electrically connected inseries between external input terminals 300 and 301. Fuses 230 and 231are connected to the resistors 220 and 221 in parallel, respectively. Agate electrode of a transistor 210 is connected to a node between theresistors 220 and 221. A drain region of the transistor 210 is connectedto an external input/output terminal 303 through an internal circuit 240while a source region thereof is connected to an external input/outputterminal 304 through an internal circuit 241. The fuses 230 and 231 ofthe trimming circuit of this semiconductor device are formed ofpolysilicon but may be formed of aluminum etc. as a metal thin film.Note that, pairs of the resistors 220, 221 and of the fuses 230, 231 maybe provided in plural as needed.

The trimming type manufacturing method includes: measuring and checkingthe quality of the half-completed semiconductor device midway throughthe manufacturing process (FIG. 16, Step F); and determining fuse cutoutportions in the trimming circuit so as to absorb variations ofindividual semiconductor chips (FIG. 16, Step G) and trimming theindividual semiconductor chips (FIG. 16, Step H) to thereby reduce thevariations in electric characteristics of the semiconductor device.

However, the conventional manufacturing methods involve the followingproblems. With the feed-back type manufacturing method as the prior artof FIG. 15, initial conditions for new manufacturing process are firstset by, for example, analogizing and referring from/to the existingmanufacturing process (existing technique) and then a product ismanufactured by way of trial or simulation through all the steps underthe initial manufacturing conditions. Next, the quality is measured andchecked, after which the initial manufacturing conditions are revisedbased on the preset criteria to determine the next manufacturingconditions. Thus, the quality check step F and the manufacturingcondition setting step G cannot be applied to the semiconductor devicein course of manufacture. The wafer inspection result of the completedsemiconductor device can be fed back for improving the nextmanufacturing conditions to thereby improve the manufacturing process.However, this is not directly contributable to reduction in variationsof the semiconductor device in course of manufacture.

With the trimming type manufacturing method as the prior art of FIG. 16,the half-completed semiconductor device itself is measured midwaythrough the manufacturing process, and hence the quality check step Fand the manufacturing condition setting step G can be applied to thesemiconductor device in course of manufacture. However, in this method,quality damage is caused on the semiconductor device at the time ofmeasurement (due to the contact type measurement in most cases) or atrimming circuit is provided in the semiconductor device for reflectingmeasurements therein in advance. As a result, this redundant circuitleads to an increase of chip area of the semiconductor device, resultingin lowering of mass-production efficiency and final increase in cost.

SUMMARY OF THE INVENTION

The present invention has an object to provide a manufacturing methodfor a semiconductor device, which enables reduction in variation of ahalf-completed semiconductor device without increasing a chip area ofthe semiconductor device.

A manufacturing method for a semiconductor device according to thepresent invention includes: a pre-manufacturing process X formanufacturing wafer (hereinafter, referred to as “main body wafer”)where the semiconductor device to be completed as a product is formed;and a monitor wafer manufacturing process (FIG. 1, Step Z) formanufacturing a wafer (hereinafter, referred to as “monitor wafer”)where a monitor element 200 is formed, in which the main body wafermanufacturing process X and the monitor wafer manufacturing process Zshare a monitoring step (FIG. 1, Step C) of copying a quality of thesemiconductor device on the monitor element 200, the main body wafermanufacturing process X includes a variation reduction step (FIG. 1,Step H) after the monitoring step C, and the monitor wafer manufacturingprocess Z includes a quality check step (FIG. 1, Step F) of measuringcharacteristics of the monitor element 200 after the monitoring step Cand its subsequent condition setting step (FIG. 1, Step G) of setting amanufacturing condition in the variation reduction step H based onmeasurement information. The aforementioned manufacturing method for asemiconductor device is now referred to as a “feed-forward manufacturingmethod” herein.

An embodiment of the present invention will be described in detaillater. To explain it in brief, as shown in FIG. 1, variations of thesemiconductor device are copied to the monitor element 200 (FIG. 4) incourse of manufacture (FIG. 1, Step C), a quality of the half-completedsemiconductor device is checked (FIG. 1, Step F), a quality of thecompleted semiconductor device is estimated based on the measuredinformation (FIG. 1, Step G1), the manufacturing conditions of avariation reduction step in the subsequent manufacturing process are setin an analog fashion based on the estimated information (FIG. 1, StepG2), and the variations in electric characteristics are reduced underthe newly set manufacturing conditions to complete the manufacture ofthe semiconductor device (FIG. 1, Step H). Variations in electriccharacteristics of the semiconductor device in course of manufacture canthus be reduced considerably. In other words, according to the presentinvention, the variations of the semiconductor device can be reducedwithout causing any quality damage on the semiconductor device to becompleted as a product and also without requiring any redundant circuit.

Further, forming the monitor element 200 on which the quality of thesemiconductor device is copied in an amplifying manner on a monitorwafer and utilizing it, monitoring can be performed in a short time atlow costs to thereby obtain measurement information sufficient in termsof both quality and quantity since the monitor wafer is only subjectedto a short-term process unlike the main body wafer which is subjected toa long-term process. Thus, the manufacturing conditions for the qualitycheck step F can be made more precisely. The feed-forward manufacturingmethod of the present invention accordingly enables a further reductionin variations in electric characteristics of the semiconductor deviceand realizes a manufacturing method for a semiconductor device capableof manufacturing the semiconductor device with high quality in highyields.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 is a conceptual view illustrative of a manufacturing process flowof a feed-forward manufacturing method according to the presentinvention;

FIG. 2 is a flowchart of a typical macro-manufacturing process flow fora semiconductor device;

FIG. 3 is a flowchart of a typical manufacturing process flow of apre-manufacturing process of a manufacturing method for a semiconductordevice;

FIG. 4 is a schematic diagram showing a monitor element 200 used in anembodiment of the present invention;

FIG. 5 is a sectional view illustrative of a typical manufacturingmethod for a semiconductor device used in an embodiment of the presentinvention in the step order;

FIG. 6 is a sectional view illustrative of a typical manufacturingmethod for a semiconductor device used in an embodiment of the presentinvention in the step order;

FIG. 7 is a sectional view illustrative of a typical manufacturingmethod for a semiconductor device used in an embodiment of the presentinvention in the step order;

FIG. 8 is a sectional view illustrative of a typical manufacturingmethod for a semiconductor device used in an embodiment of the presentinvention in the step order;

FIG. 9 is a sectional view illustrative of a typical manufacturingmethod for a semiconductor device used in an embodiment of the presentinvention in the step order;

FIG. 10 is a sectional view illustrative of a typical manufacturingmethod for a semiconductor device used in an embodiment of the presentinvention in the step order;

FIG. 11 is a sectional view illustrative of a typical manufacturingmethod for a semiconductor device used in an embodiment of the presentinvention in the step order;

FIG. 12 is a sectional view illustrative of a typical manufacturingmethod for a semiconductor device used in an embodiment of the presentinvention in the step order;

FIG. 13 is a sectional view illustrative of a typical manufacturingmethod for a semiconductor device used in an embodiment of the presentinvention in the step order;

FIG. 14 is a conceptual view illustrative of a manufacturing processflow which absorbs variations in electric characteristics in aconventional manufacturing method for a semiconductor device;

FIG. 15 is a flowchart illustrative of a manufacturing process flow forabsorbing variations in electric characteristics in a manufacturingmethod for a semiconductor device of Prior Art 1 (first prior art);

FIG. 16 is a flowchart illustrative of a manufacturing process flow forabsorbing variations in electric characteristics in a manufacturingmethod for a semiconductor device of Prior Art 2 (second prior art);

FIG. 17 is a flowchart illustrative of a flow for determiningmanufacturing conditions used for a feed-back applied manufacturingmethod of Prior Art 1;

FIG. 18 is a schematic circuit diagram showing a trimming circuit usedfor a trimming applied manufacturing method of Prior Art 2;

FIG. 19 is a sectional view illustrative of a typical DDD process usedin an embodiment of the present invention in the step order.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 is a conceptual view illustrative of a manufacturing process flowof a manufacturing method for a semiconductor device according to thepresent invention. A manufacturing method according to an embodiment ofthe present invention includes: a main body wafer manufacturing processX for manufacturing a wafer where the semiconductor device to becompleted as a product is formed; and a monitor wafer manufacturingprocess Z for manufacturing a wafer (hereinafter, referred to as“monitor wafer”) where a monitor element 200 which is shown in FIG. 4 isformed. The main body wafer manufacturing process X and the monitorwafer manufacturing process Z share a monitoring step C alone. Themonitoring step C is important as a step of copying on the monitorelement 200 formed on the monitor wafer, a quality of the semiconductordevice formed on the main body wafer.

A manufacturing process flow (FIG. 3) is basically applied to the mainbody wafer manufacturing process X. The monitoring step C of FIG. 1 isselected from the manufacturing process flow of FIG. 3 as needed. As themonitoring step C, plural steps may be selected. It is assumed here thatsteps preceding a step specified as the monitoring step C, for example,a gate oxide film formation step N are each referred to as a “main bodypre-process step” B while steps in a manufacturing process succeedingthe monitoring step C are each referred to as a “main body post-processstep” D. The main body post-process step D includes a variationreduction step H. As the variation reduction step H, plural steps may beset corresponding to the monitoring step C as needed. Steps are selectedfrom the manufacturing process flow of FIG. 3 as a subsequentpre-process step D1 and a subsequent post-process step D2 and setupstream and downstream of the variation reduction step H, respectively,as needed.

The pre-manufacturing process X for the semiconductor device applied inthe embodiment of the present invention will be described in detail withreference to step-order sectional views (FIGS. 5 to 13, and 19). Theembodiment of the present invention is not limited to the step-ordersectional views but is applicable to any pre-manufacturing process for atypical semiconductor device. Needless to say, the present invention isnot limited to a manufacturing method for a MOS semiconductor device butis applicable to a manufacturing method for a bipolar semiconductordevice, a compound semiconductor, or the like.

1. Field Oxide Film

Insulating films partially different in thickness are selectively formednear the surface of a semiconductor substrate, for example, a P-typesemiconductor substrate 102 through thermal oxidation etc. to therebyform an oxide film 103 having a thickness of about 300 to 1,000 nm andan oxide film 104 having a thickness of about 50 to 100 nm. Here, theP-type semiconductor substrate is used but an N-type semiconductorsubstrate can be used as well (FIG. 5).

2. N Well

Impurity ions, for example, phosphorous ions are implanted into the mainbody wafer surface in an impurity amount of about 3.0×10¹²/cm² tothereby form an impurity doped region for forming an N well 111. Thisstep is called a well impurity doping step. Next, impurities doped intothe main body wafer through ion implantation are electrically inactiveunless otherwise treated and thus subjected to activation through heattreatment and recovered from damage upon ion implantation. In order toform a PMOS transistor inside the N well 111, the N well 111 needs tohave some depth. Typically, the requisite depth is about 1 to 3 mm forthe miniaturized transistor and about 3 to 8 mm for the high-breakdownvoltage transistor. To obtain an impurity profile necessary for the heattreatment, thermal diffusion is carried out under the conditions of1,100 to 1,200° C. for several to over ten hours with an electricfurnace, for example. This is called a “well thermal diffusion step”(FIG. 6). The well thermal diffusion step is such that plural (about150) large-diameter wafers are simultaneously processed at hightemperature for a long time. Here, the N well 111 is used, but a P wellor both the N well and the P well can be used.

3. LOCOS

B or BF₂ ions for selectively forming a P-type channel stopper 142 areselectively implanted into a portion near the P-type semiconductorsubstrate 102 surface, for example, after which an element isolationinsulating film 130 and the P-type channel stopper 142 are selectivelyformed by using a LOCOS method etc. (FIG. 7). In the case of forming theelement isolation oxide film using the LOCOS method, the thermaloxidation step is such that plural (about 150) large-diameter wafers aresimultaneously processed at high temperature and high oxidation rate fora long time.

4. Channel Doping

Phosphorous, As, B, or BF₂ ions for controlling a threshold voltage areselectively implanted into the semiconductor substrate surface in anactive region 132 for element formation where a MOS transistor is formedlater, for example, to thereby form an impurity doped region 201. Insome cases, as a region corresponding to the impurity doped region 201,plural regions may be separately formed according to need, e.g.,according to a conductivity type of the MOS transistor, and thethreshold voltage. Some specifications of the semiconductor device mayimpose too narrow tolerance on an ion implantation amount etc. (FIG. 8).Even if a channel doping step M and its subsequent step, i.e., a gateoxide film step N are carried out in reverse order, the samesemiconductor device can be obtained.

5. Gate Oxide Film

An oxide film near the semiconductor substrate surface in the activeregion 132 for element formation is removed to form a gate oxide film161 through thermal oxidation etc. (FIG. 9). Here, the thickness of thegate oxide film 161 is arbitrarily set according to the specificationsof the semiconductor device, but is an important process parameter fordetermining a threshold voltage of the MOS transistor. After that (afterthe formation of the gate oxide film 161), phosphorous, B, or BF₂ ionsfor controlling a threshold voltage may be selectively implanted, forexample, into the semiconductor substrate surface in the active region132 for element formation where the MOS transistor is formed later tothereby form the impurity doped region 201 as shown in FIG. 8.

6. Polysilicon

A polysilicon gate 170 is selectively formed on the gate oxide film 161through CVD, photolithography, or etching (FIG. 10). Here, a processwidth of the polysilicon gate 170 is arbitrarily set according to thespecifications of the semiconductor device, but is an important processparameter for determining a drive power of the MOS transistor. Also,after that, although not shown here, the oxide film is formed and then asecond polysilicon layer for resistor may be formed.

7. Source/Drain Formation

After an oxide film 164 is formed on the P-type semiconductor substrate102 surface by CVD or thermal oxidation, phosphorous, As, B, or BF₂ ionsfor forming source/drain regions are implanted to the polysilicon gate170 and the oxide film 164 in desired regions of the active region 132for element formation in a self-alignment manner, for example, tothereby form an N-type source region 181, an N-type drain region 191, aP-type source region 182, and a P-type drain region 192 (FIG. 11). Here,the source region and drain region may each have a low-concentrationimpurity region called “lightly doped drain (LDD)” and alow-concentration impurity region called “double diffused drain” (DDD)and formed by diffusing impurities in a nitrogen or diluted oxygenatmosphere at about 900 to 1,100° C. The source/drain regions may have alow-concentration impurity region 134 formed by thermally diffusingimpurities doped through ion implantation before forming thesource/drain regions in a source/drain formation step P, at about 900 to1,100° C. in a nitrogen or diluted oxygen atmosphere (FIG. 19). Thisstep is hereinafter referred to as a DDD step.

8. Interlayer Insulating Film

An oxide film is deposited on the P-type semiconductor substrate 102surface by CVD or the like and annealed at about 800 to 900° C. in anitrogen or diluted oxygen atmosphere to thereby form an interlayerinsulating film 163 (FIG. 12).

9. Contact Hole, Metal Wiring, and Protective Film

A contact hole 250 is selectively formed in a desired region of theinterlayer insulating film 163 by photolithography or etching, and thecontact hole is made smooth through wet etching, reflow technique, orthe like. A metal wiring 260 is selectively formed through sputtering,photolithography, etching, or the like. A protective film 270 isdeposited by CVD etc. and an opening is selectively formed in a desiredregion (in an external connection terminal region or the like). Here,the case of forming the single-layer metal wiring 260 is described, butplural layers may be laminated through an interlayer insulating film asthe metal wiring. Also, the metal wiring may be formed such that barriermetal forms a lower layer thereof and an antireflection film forms anupper layer. In addition, an annealing step for recovery from processdamage may be carried out in a hydrogen atmosphere at 350 to 450° C.(FIG. 13).

Embodiment

The monitor wafer manufacturing process Z as a feature of the presentinvention includes: a monitor wafer pre-process step (FIG. 1, Step A); astep of copying characteristics of a main body wafer by simultaneouslyprocessing the main body wafer and monitor wafer (FIG. 1, Step C); amonitor post-process step for the monitor element 200 (FIG. 1, Step E);a step of measuring characteristics of the monitor element 200 (FIG. 1,Step F); and a step of setting manufacturing conditions in the variationreduction step H (FIG. 1, Step G). Here, the monitoring step C ofcopying the quality of the half-completed main body wafer on the monitorwafer aims at simultaneously processing the main body wafer and themonitor wafer in the same apparatus. In this embodiment, a MOS diodeshown in FIG. 4 is used as the monitor element 200 where the quality ofthe half-completed semiconductor device is copied in the monitoring stepC. Hereinafter, an embodiment of the feed-forward type manufacturingmethod according to the present invention will be described in detailcentering on a monitor wafer manufacturing process Z.

1. Monitor Pre-Process Step

Phosphorous, As, B, or BF₂ ions for controlling a threshold voltage areimplanted, for example, into a portion near the surface of the P-typesemiconductor substrate 102 in a concentration about 10 to 50% lowerthan the P-type semiconductor substrate 102 for the semiconductor deviceof the main body wafer to thereby form a channel region. Here, thechannel doping step is desirably carried out under the same conditionsas the main body wafer (FIG. 3, Step M). This is because the variationsin the channel doping step are further reduced. The reason for using thelow-concentration semiconductor substrate in this case is to improve themonitoring sensitivity. Next, the gate oxide film 161 is formed underthe same conditions as the semiconductor device whose process conditionis to be predicted. In this embodiment, the production variation in thegate oxide film formation step is assumed to be smaller than the thermaldiffusion step of forming the low-concentration source/drain regions.Processing simultaneous with that for the semiconductor device of themain body wafer is unnecessary. The polysilicon gate 170 is formed onthe gate oxide film 161 by CVD. In this case, the polysilicon gate 170is used as the gate electrode but metal, for example, an aluminumsilicon alloy may be used therefor. Note that, the manufacturing processfor the monitor wafer preceding the monitoring step C is preferablysimpler than the manufacturing process for the main body wafer precedingthe monitoring process C. More specifically, the monitor pre-processstep A of this embodiment dispenses with the N well step K and the LOCOSstep L unlike the main body pre-process step B and is preferably asimple and short-term process in terms of cost performance (FIG. 1, StepA).

2. Monitoring Step

The monitoring step C is important as a step of copying a quality of themain body wafer during manufacture on the monitor wafer, i.e., a step ofaccurately copying on the monitor wafer a process influence by which theparameter having a high rate of contribution that influences the qualityof the completed semiconductor device can be estimated. In thedescription of this embodiment, the thermal diffusion step (DDD step) inthe source/drain formation step P involving large production variationsis set as the monitoring step C by way of example. The DDD step is astep of thermally diffusing impurities doped through ion implantation inadvance to form the low-concentration impurity region 134. In thethermal diffusion step, plural (about 150) large-diameter wafers aresimultaneously processed at high temperature of about 900 to 1,100° C.for a long time in a nitrogen or diluted oxygen atmosphere. Thus, thisstep involves a high possibility that the thermal history is differentbetween the wafers or in the wafer and the production variation iscaused. The variations in impurity concentration profile of the impuritydoped region 201 selectively formed in the active region 132 for elementformation and the low-concentration impurity region 134 lead to theproduction variations. Such variations will be obviously observed asvariations in drive power, breakdown voltage, and threshold voltage ofthe transistor.

The monitor wafer is processed simultaneously with the main body waferhaving undergone the main body pre-process step B. Simultaneousprocessing is only intended to more accurately copy the processinfluence, so if the processing conditions are the same between the mainbody wafer and the monitor wafer, simultaneous processing for the mainbody wafer and the monitor wafer is not the requisite for the presentinvention. This concerns a copy accuracy. In order to more accuratelycopy the process influence, simultaneous processing is preferred.Similarly, the monitor wafer is determined for an insertion position andthe number of wafers to be inserted in consideration of correlationbetween a variation tolerance and a variation range of the gateoxidation step (FIG. 1, Step C).

3. Monitor Post-Process Step

In light of high-sensitivity amplification and measurement of themonitor condition of the monitor wafer processed simultaneously with themain body wafer (FIG. 1, Step C), in the monitor wafer post-process step(FIG. 1, Step E), the polysilicon gate 170 is formed. The polysilicongate 170 is used as the gate electrode, metal, for example, an aluminumsilicon alloy may be used therefor.

4. Quality Check Step

Next, the process influence of the monitor element 200 is checked (StepF). In this embodiment, based on capacitance-voltage (CV)characteristics of the monitor element 200 of the monitor wafer,information on measurements of the threshold voltage Vt or flat bandvoltage Vf is obtained (FIG. 1 Step F).

5. Characteristic Estimation Step

A gate oxide film thickness of the semiconductor devices mounted ingreat numbers on each wafer and the impurity concentration profile areestimated from the measurement information. Based on a correlationbetween the known threshold voltage Vt of the monitor wafer and thethreshold voltage Vt of the transistor formed on the main body wafer,the estimation information for estimating the threshold voltage Vt ofthe main body wafer is created (FIG. 1, Step G1).

6. Condition Setting Step

In this embodiment, the interlayer insulating film formation step Q outof the main body post-process steps D is selected as the variationreduction step H. According to the estimation information, thehigh-temperature heat treatment conditions of the interlayer insulatingfilm formation step Q are determined in an analog fashion so as tosufficiently reduce the variations in the threshold voltage Vt. Thehigh-temperature heat treatment conditions of the interlayer insulatingfilm formation step Q are determined for each wafer or every severalwafers according to the estimation information or the installationposition or number of wafers (FIG. 1, Step G2).

7. Variation Reduction Step

The main body wafer having undergone the monitoring step C is subjectedto the interlayer insulating film formation step Q under thehigh-temperature conditions set in the condition setting step G2 wherethe interlayer insulating film of the main body wafer is formed for eachwafer or every several wafers.

8. Subsequent Post-Process Step

The main body wafer having undergone the variation reduction step Hpasses through the subsequent post-process steps including a waferinspection step U and thus the pre-manufacturing process X ends.

As understood from the above description, the monitoring step C is astep of accurately copying a quality of the main body wafer on themonitor wafer. Note that the wafer pre-process step A and the monitorpost-process step E need to be steps of forming the monitor element 200such that the copied quality variation is amplified and measured.

In this embodiment, the monitoring step is set to the DDD step in thesource/drain formation step P. The present invention is applicable to,based on the same idea, the LOCOS step L, the gate oxide film step N,the polysilicon gate step O, the channel doping step M, and variousetching steps, which cause the variations in electric characteristics ofthe semiconductor device, as the monitoring step C. Also, in the abovedescription, an alloy step in the metal wiring formation step S may beset as the variation reduction step H. The monitoring step C orvariation reduction step H may be selected in consideration of processcharacteristics. Plural steps can be set as the monitoring step C orvariation reduction step H but are preferably set in consideration ofcosts. Also, the present invention is applicable to the step causing thedamage and the damage recovery step in the manufacturing process.

The present invention is directed to applications to manufacture oftypical semiconductor devices and thus is applicable in a wide field ofapplications. For example, when the present invention is applied tomanufacture of a semiconductor device including both a MOS transistorrequiring a high-voltage operation and a MOS transistor requiring alow-voltage low-current operation, more specifically, a power managementsemiconductor device that controls charge/discharge of a lithium-ionbattery, an effect of the present invention that realizes asemiconductor device with high quality and low cost can be exertedfully. However, needless to say, the present invention is not limitedthereto.

1. A manufacturing method for a semiconductor device, comprising:selecting as a monitoring step, one step from a plurality of steps in amain body wafer manufacturing process for manufacturing a main bodywafer on which the semiconductor device is formed; selecting as avariation reduction step, one step from main body post-process stepssucceeding the monitoring step, the monitoring step being included in amonitor wafer manufacturing process for manufacturing a monitor wafer onwhich a monitor element is formed, the monitor wafer manufacturingprocess including: a monitor pre-process step; the monitoring step; aquality check step of measuring a characteristic of the monitor elementformed under the same condition; and a condition setting step of settinga manufacturing condition in the variation reduction step based on aprocess influence measured in the quality check step; and performing themain body post-process step under the manufacturing condition set in thecondition setting step, the monitoring step comprising a thermaldiffusion process for a low-concentration impurity region in asource/drain formation step.
 2. A manufacturing method for asemiconductor device according to claim 1, wherein an interlayerinsulating film formation step is set as the variation reduction step.3. A manufacturing method for a semiconductor device according to claim1, wherein an alloy step in a metal wiring formation step is set as thevariation reduction step.